research-focus Research Focus International Scientific Journal Research Focus 2181-3833 Ilm-fan va innovatsiyalar akademiyasi 10.66073/researchfocus.v4i11.1824 REL-A-013140 01.00.00 RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON. РАМАНОВСКИЙ СПЕКТРОСКОПИЧЕСКИЙ АНАЛИЗ ФАЗООБРАЗОВАНИЯ СИЛИЦИДА ВОЛЬФРАМА (WSI2) И НАПРЯЖЕНИЙ РЕШЁТКИ В КРЕМНИИ P-ТИПА. P-TIPLI KREMNIYDA VOLFRAM SILITSIDI (WSI2) FAZASINING HOSIL BO‘LISHI VA PANJARA KUCHLANISHINING RAMAN SPEKTROSKOPIK TAHLILI. Sh.B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan Sh.Kh. Daliev J.J. Khamdamov Y.Z. Mardiyev 05 12 2025 2025 4 11 16 24 https://creativecommons.org/licenses/by/4.0 This work is licensed under a Creative Commons Attribution 4.0 International License.

In this study, the effect of tungsten (W) incorporation on the compositional and structural properties of p-type single-crystal silicon (p-Si) samples via high-temperature (1573 K, 5 hours) thermal diffusion was investigated. The properties of the samples were analyzed using Raman scattering spectroscopy. Raman spectroscopy analysis confirmed a decrease in the intensity of the main silicon LO peak in the p-Si sample, as well as the appearance of new, sharp peaks at frequencies of ~244 cm⁻¹ and ~429 cm⁻¹. These changes indicate the formation of a new stable phase – tungsten silicide (WSi2) – on the silicon surface. Furthermore, the shift of the 2TA peak center to a higher frequency (~319 cm⁻¹) indicated the emergence of strong compressive mechanical stresses in the lattice.

В данной работе исследовано влияние внедрения вольфрама (W) на композиционные и структурные свойства образцов монокристаллического кремния p-типа (p-Si) методом высокотемпературной (1573 К, 5 часов) термической диффузии. Свойства образцов были проанализированы методом спектроскопии комбинационного рассеяния света (Рамановской спектроскопии). Анализ Рамановских спектров подтвердил снижение интенсивности основного LO-пика кремния в образце p-Si, а также появление новых острых пиков на частотах ~244 см⁻¹ и ~429 см⁻¹. Эти изменения свидетельствуют об образовании на поверхности кремния новой стабильной фазы – силицида вольфрама (WSi2). Кроме того, смещение центра пика 2TA в область более высоких частот (~319 см⁻¹) указало на возникновение сильных сжимающих механических напряжений в кристаллической решетке.

Ushbu tadqiqotda yuqori haroratli (1573 K, 5 soat) termik diffuziya yo‘li bilan volfram (W) kiritilishining p-tipli monokristall kremniy (p-Si) namunalarining tarkibiy va strukturaviy xossalariga ta‘siri o‘rganildi. Namunalarning xossalari Raman sochilish spektroskopiyasi yordamida tahlil qilindi. Raman spektroskopiyasi tahlili p-Si namunasida kremniyning asosiy LO cho‘qqisi intensivligining kamayishini, shuningdek ~244 sm⁻¹ va ~429 sm⁻¹ chastotalarda yangi, o‘tkir cho‘qqilarning paydo bo‘lishini tasdiqladi. Bu o‘zgarishlar kremniy yuzasida yangi barqaror faza – volfram silitsidi (WSi2) hosil bo‘lganidan dalolat beradi. Bundan tashqari, 2TA cho‘qqisi markazining yuqoriroq chastotaga (~319 sm⁻¹) siljishi panjarada kuchli siquvchi mexanik kuchlanishlar yuzaga kelganini ko‘rsatdi.

 single-crystal silicon (p-Si) tungsten (W) thermal diffusion Raman spectroscopy resistivity tungsten silicide (WSi2) phonon bands (TA LA 2TO). монокристаллический кремний (p-Si) вольфрам (W) термическая диффузия Рамановская спектроскопия удельное сопротивление силицид вольфрама (WSi2) фононные полосы monokristall kremniy (p-Si) volfram (W) termik diffuziya Raman spektroskopiyasi solishtirma qarshilik volfram silitsidi (WSi2) fonon zonalari (TA LA 2TO). Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint effect of Ni and Gf impurity atoms on the silicon solar cell photosensitivity,” Applied Solar Energy (English translation of Geliotekhnika), 41(1), 80–81 (2005). K.S. Daliev, Sh.B. Utamuradova, A. Khaitbaev, J.J. Khamdamov, Sh.B. Norkulov, and M.B. Bekmuratov, “Defective Structure of Silicon Doped with Dysprosium,” East Eur. J. Phys. (2), 283 (2024). https://doi.org/10.26565/2312-4334-2024-2-30 X. Kong, Z. Xi, L. Wang, Y. Zhou, Y. Liu, et al., “Recent Progress in Silicon−Based Materials for Performance Enhanced Lithium Ion Batteries,” Molecules, 28(5), 2079 (2023). https://doi.org/10.3390/molecules28052079 Jerzy Ruzyllo, Richard E. Novak, “Cleaning technology in semiconductor device manufacturing” ISBN 1-56677-188-9 Printed in the United States of America K. Nakashima “Thermally induced defects in p-type silicon” Journal of Applied Physics (1993) R. Shuker and R. W. Gammon, "Raman-Scattering Selection-Rule Breaking in Amorphous Materials," Physical Review Letters, vol. 25, no. 4, pp. 222–225, 1970 P. A. Temple and C. E. Hathaway, "Multiphonon Raman spectrum of silicon," Physical Review B, vol. 7, no. 8, pp. 3685–3697, 1973 L. Romano, A. M. Piro, M. G. Grimaldi, and C. Bongiorno, "Raman spectroscopy analysis of defects and strain in ion implanted Si," Journal of Applied Physics, vol. 121, no. 23, 235105, 2017. De Wolf, "Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits," Semiconductor Science and Technology, vol. 11, no. 2, pp. 139-154, 1996. G. Milekhin, M. S. A. Guedes, L. A. M. G. G. de Souza, et al., "Structural and vibrational properties of tungsten silicide thin films grown by magnetron sputtering," Journal of Applied Physics, vol. 129, 015301, 2021.