research-focus Research Focus International Scientific Journal Research Focus 2181-3833 Ilm-fan va innovatsiyalar akademiyasi 10.66073/researchfocus.v3i3.919 REL-A-012506 01.00.00 DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION. ЛЕГИРОВАНИЕ МОНОКРИСТАЛЛА КРЕМНИЯ ТЕРБИЕМ МЕТОДОМ ДИФФУЗИИ. KREMNIY MONOKRISTALLINI TERBIY BILAN DIFFUZIYA YO‘LI ORQALI LEGIRLASH. Saidimov Ya.A. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan Rumi R.F. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan Umarov F.B. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan 05 04 2024 2024 3 3 8 10 https://creativecommons.org/licenses/by/4.0 This work is licensed under a Creative Commons Attribution 4.0 International License.

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

Методом диффузии при температуре 1250 градусов Цельсия в течение 50 часов были получены монокристаллические образцы кремния, легированные тулием. Установлено, что после высокотемпературного отжига образцы обладают проводимостью p-типа. После этого процесса образцы изменили тип проводимости с p-типа на n-тип.

Diffuziya usuli yordamida 1250 daraja Selsiy haroratda 50 soat davomida tuliy bilan legirlangan kremniyning monokristall namunalari tayyorlandi. Yuqori haroratli tavlashdan keyin namunalar p-tipli o‘tkazuvchanlikka ega ekanligi aniqlandi. Ushbu jarayondan so‘ng namunalar o‘tkazuvchanlik turini p-tipdan n-tipga o‘zgartirdi.

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