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  <front>
    <journal-meta>
      <journal-id journal-id-type="publisher-id">research-focus</journal-id>
      <journal-title-group>
        <journal-title>Research Focus International Scientific Journal</journal-title>
        <abbrev-journal-title abbrev-type="publisher">Research Focus</abbrev-journal-title>
      </journal-title-group>
      <issn pub-type="epub" publication-format="electronic">2181-3833</issn>
      <publisher>
        <publisher-name>Ilm-fan va innovatsiyalar akademiyasi</publisher-name>
      </publisher>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="doi">10.66073/researchfocus.v2i5.186</article-id>
      <article-id pub-id-type="other" assigning-authority="relibrary.uz">REL-A-010574</article-id>
      <title-group>
        <article-title xml:lang="en">DEFECT FORMATION IN IRON-DOPED SILICON SINGLE CRYSTALS</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>ДЕФЕКТООБРАЗОВАНИЕ В МОНОКРИСТАЛЛАХ КРЕМНИЯ, ЛЕГИРОВАННОГО ЖЕЛЕЗОМ</trans-title>
        </trans-title-group>
        <trans-title-group xml:lang="uz">
          <trans-title>TEMIR BILAN LEGIRLANGAN KREMNIY MONOKRISTALLARIDA DEFEKT HOSIL BO‘LISHI</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group content-type="author">
        <contrib contrib-type="author">
          <string-name>Kh.S. Daliev</string-name>
          <aff>Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”,</aff>
        </contrib>
        <contrib contrib-type="author">
          <string-name>Z.M. Khusanov</string-name>
          <aff>Institute of Semiconductor Physics and Microelectronics at NUUz (Tashkent), Uzbekistan</aff>
        </contrib>
      </contrib-group>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2023-06-05">
        <day>05</day>
        <month>06</month>
        <year>2023</year>
      </pub-date>
      <pub-date date-type="collection">
        <year>2023</year>
      </pub-date>
      <volume>2</volume>
      <issue>5</issue>
      <fpage>11</fpage>
      <lpage>15</lpage>
      <permissions>
        <license xlink:href="https://creativecommons.org/licenses/by/4.0">
          <ali:license_ref>https://creativecommons.org/licenses/by/4.0</ali:license_ref>
          <license-p>This work is licensed under a Creative Commons Attribution 4.0 International License.</license-p>
        </license>
      </permissions>
      <self-uri xlink:href="https://relibrary.uz/REL-A-010574/"/>
      <abstract xml:lang="en">
        <p>The effect of diffusion alloying with iron on the electrical properties of heat-treated silicon obtained by the Czochralski method has been studied. It is shown that the presence of iron reduces the concentration of nucleation centers for thermal donors of &quot;growth&quot; origin. The latter circumstance caused a decrease in their initial speed; on the other hand, the admixture of iron reduced the probability of decay of thermal donors, leading to their transformation into an electrically passive state, which led to an increase in the concentration of thermal donors during prolonged heating. Heat treatment at temperatures above 600°C caused the iron impurity to lose its electrical activity. Hardening of Si crystals from 1100÷1200 °C for 10 hours returned the iron atoms to the electrically active substitution position.</p>
      </abstract>
      <trans-abstract xml:lang="ru">
        <p>Исследовано влияние диффузионного легирования железом на электрические свойства термообработанного кремния, полученного методом Чохральского. Показано, что присутствие железа снижает концентрацию зародышей термодоноров «ростового» происхождения. Последнее обстоятельство вызвало снижение их начальной скорости; с другой стороны, примесь железа снижала вероятность распада термодоноров, приводя к их переходу в электрически пассивное состояние, что приводило к увеличению концентрации термодоноров при длительном нагреве. Термическая обработка при температурах выше 600°С приводила к потере электрической активности примеси железа. Закалка кристаллов Si от 1100÷1200 °С в течение 10 часов возвращала атомы железа в электрически активное положение замещения.</p>
      </trans-abstract>
      <trans-abstract xml:lang="uz">
        <p>Choxralskiy usulida olingan issiqlik bilan ishlangan kremniyning elektr xossalariga temir bilan diffuzion legirlashning ta‘siri o‘rganilgan. Temirning mavjudligi &quot;o‘sish&quot; kelib chiqishiga ega termodonorlar uchun kurtaklanish markazlari konsentratsiyasini kamaytirishi ko‘rsatilgan. Bu holat ularning boshlang‘ich tezligi pasayishiga sabab bo‘ldi; boshqa tomondan, temir aralashmasi termodonorlarning parchalanish ehtimolini kamaytirib, ularning elektr jihatdan passiv holatga o‘tishiga olib keldi, bu esa uzoq muddat qizdirishda termodonorlar konsentratsiyasining ortishiga sabab bo‘ldi. 600°C dan yuqori haroratlarda issiqlik bilan ishlov berish temir aralashmasining elektr faolligini yo‘qotishiga olib keldi. Si (Fe) kristallarini 1100÷1200 °C dan 10 soat davomida chiniqtirish temir atomlarini elektr jihatdan faol o‘rin almashish holatiga qaytardi.</p>
      </trans-abstract>
      <kwd-group xml:lang="en">
        <kwd>morphology</kwd>
        <kwd>vacancy</kwd>
        <kwd>mobility</kwd>
        <kwd>temperature</kwd>
        <kwd>diffusion</kwd>
        <kwd>composition</kwd>
        <kwd>surface</kwd>
        <kwd>thermal donors</kwd>
      </kwd-group>
      <kwd-group xml:lang="ru">
        <kwd>морфология</kwd>
        <kwd>вакансия</kwd>
        <kwd>подвижность</kwd>
        <kwd>температура</kwd>
        <kwd>диффузия</kwd>
        <kwd>состав</kwd>
        <kwd>поверхность</kwd>
        <kwd>термодоноры</kwd>
      </kwd-group>
      <kwd-group xml:lang="uz">
        <kwd>morfologiya</kwd>
        <kwd>vakansiya</kwd>
        <kwd>harakatchanlik</kwd>
        <kwd>harorat</kwd>
        <kwd>diffuziya</kwd>
        <kwd>tarkib</kwd>
        <kwd>sirt</kwd>
        <kwd>termodonorlar</kwd>
      </kwd-group>
    </article-meta>
  </front>
  <back>
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</article>
